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TYPICAL PERFORMANCE CURVES
APT50GN60B APT50GN60B_S(G) APT50GN60S APT50GN60B(G) APT50GN60S(G) 600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses.
G C E
(B)
TO -2 47
D3PAK
(S)
C G E
* 600V Field Stop
* * * * Trench Gate: Low VCE(on) Easy Paralleling 6s Short Circuit Capability 175C Rated
C G E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current
8
All Ratings: TC = 25C unless otherwise specified.
APT50GN60B(G) UNIT Volts
600 30
@ TC = 25C
107 64 150 150A @ 600V 366 -55 to 175 300
C Watts Amps
Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
@ TC = 175C
Switching Safe Operating Area @ TJ = 175C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) Gate Threshold Voltage (VCE = VGE, I C = 800A, Tj = 25C) MIN TYP MAX Units
600 5.0 1.05 5.8 1.45 1.7 25
2
6.5 1.85
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125C)
I CES I GES RG(int)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
A nA
7-2009 050-7612 Rev C
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V) Intergrated Gate Resistor
TBD 600 N/A
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA SCSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT50GN60B_S(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 50A TJ = 175C, R G = 4.3
7,
MIN
TYP
MAX
UNIT
3200 125 100 9.0 325 25 175
VGE = nC V pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area
15V, L = 100H,VCE = 600V VCC = 360V, VGE = 15V, TJ = 150C, R G = 4.3 7 Inductive Switching (25C) VCC = 400V VGE = 15V I C = 50A
150 6 20 25 230 100 1185 1275 1565 20 25 260 140 1205 1850 2125
A
Short Circuit Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
4 5
s
ns
RG = 4.3 7 TJ = +25C
Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
44 6
J
Inductive Switching (125C) VCC = 400V VGE = 15V I C = 50A RG = 4.3 7
55
ns
Turn-on Switching Energy (Diode) Turn-off Switching Energy
66
TJ = +125C
J
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.41 N/A 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.)
7-2009 Rev C
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) 8 Continuous current limited by package lead temperature.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
050-7612
TYPICAL PERFORMANCE CURVES
160
V
GE
APT50GN60B_S(G)
200 180 IC, COLLECTOR CURRENT (A) 160 140 120 100 80 60 9V 40 20 0 8V 7V 0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 11V 10V 15V 13V 12V
= 15V
140 IC, COLLECTOR CURRENT (A) 120 100 80 TJ = 25C 60 40 20 0 TJ = -55C TJ = 175C TJ = 125C
0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
FIGURE 1, Output Characteristics(TJ = 25C) 160 140 IC, COLLECTOR CURRENT (A) 120 TJ = 125C 100 TJ = 175C 80 60 40 20 0 0 2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
FIGURE 2, Output Characteristics (TJ = 125C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V)
I = 50A C T = 25C
J
TJ = -55C TJ = 25C
14 12 10 8 6 4 2 0 0
VCE = 120V VCE = 300V VCE =480V
50
100 150 200 250 300 350 400 GATE CHARGE (nC) FIGURE 4, Gate Charge
3.0 IC = 100A 2.5 2.0 1.5 1.0 0.5 0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5
3.0 2.5 IC = 100A 2.0 IC = 50A 1.5 1.0 0.5 0 IC = 25A
IC = 50A IC = 25A
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.10
8
25 50 75 100 125 150 175 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 140
0
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
1.05
IC, DC COLLECTOR CURRENT(A)
120 100 80 60 40 20 0 -50 -25 7-2009 050-7612 Rev C
Lead Temperature Limited
1.00
0.95
0.90 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
APT50GN60B_S(G)
25 td(ON), TURN-ON DELAY TIME (ns) VGE = 15V 20 td (OFF), TURN-OFF DELAY TIME (ns) 350 300 250 200 150 100 50 VCE = 400V RG = 4.3
L = 100 H VGE =15V,TJ=125C VGE =15V,TJ=25C
15
10
5 VCE = 400V
TJ = 25C, 125C RG = 4.3 L = 100 H
30 50 70 90 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 120
RG = 4.3, L = 100H, VCE = 400V
0
10
30 50 70 90 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 160 140 120
TJ = 125C, VGE = 15V RG = 4.3, L = 100H, VCE = 400V
0
10
100 tr, RISE TIME (ns) tf, FALL TIME (ns)
80
100 80 60 40
TJ = 25C, VGE = 15V
60
40
20
TJ = 25 or 125C,VGE = 15V
20 10 30 50 70 90 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 4000 EOFF, TURN OFF ENERGY LOSS (J) 3500 3000 2500 2000 1500
TJ = 25C
V = 400V CE V = +15V GE R = 4.3
G
10 30 50 70 90 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 6000 EON2, TURN ON ENERGY LOSS (J)
V = 400V CE V = +15V GE R = 4.3
G
0
0
5000
TJ = 125C
TJ = 125C
4000
3000
2000
1000 500 10 30 50 70 90 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 6000
V = 400V CE V = +15V GE R = 4.3
G
1000
TJ = 25C
10 30 50 70 90 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 16000 SWITCHING ENERGY LOSSES (J) 14000 12000 10000 8000 6000
Eon2,50A Eoff,100A
V = 400V CE V = +15V GE T = 125C
J
0
0
SWITCHING ENERGY LOSSES (J)
Eon2,100A
Eon2,100A
5000
4000
Eoff,100A Eoff,50A
3000
7-2009
2000
Eon2,50A
4000 2000 0 0
Eoff,50A Eoff,25A Eon2,25A
1000
Eoff,25A Eon2,25A
Rev C
050-7612
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
0
TYPICAL PERFORMANCE CURVES
5,000 IC, COLLECTOR CURRENT (A) Cies 160 140 120 100 80 60 40 20 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 10
APT50GN60B_S(G)
C, CAPACITANCE ( F)
1,000 500
P
100 50
C0es Cres
100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0
0.45 0.40 ZJC, THERMAL IMPEDANCE (C/W) D = 0.9 0.35 0.30 0.25 0.5 0.20 0.15 0.10 0.05 0 10-5 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10-4 1.0 0.1 0.05 0.3 SINGLE PULSE
Note:
0.7
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
110 FMAX, OPERATING FREQUENCY (kHz)
50
F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf
T = 125C J T = 75C C D = 50 % = 400V V CE R = 4.3
G
f max2 = Pdiss =
10 6
Pdiss - P cond E on2 + E off TJ - T C R JC
20 30 40 50 60 70 80 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
10
050-7612
Rev C
7-2009
APT50GN60B_S(G)
APT40DQ60
10%
Gate Voltage TJ = 125C
td(on) Collector Current
V CC
IC
V CE
tr 5%
90%
10%
5% Collector Voltage
A
Switching Energy
D.U.T.
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage td(off) 90% Collector Voltage tf 10%
TJ = 125C
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
D PAK Package Outline
e3 SAC: Tin, Silver, Copper
Collector (Heat Sink)
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 1.04 (.041) 1.15(.045) 13.41 (.528) 13.51(.532)
3
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
Gate Collector Emitter
Heat Sink (Collector) and Leads are Plated
7-2009
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Emitter Collector Gate Dimensions in Millimeters (Inches)
050-7612
Rev C Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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